The Effect of Side Traps on Ballistic Transistor in Kondo Regime

The effect of side-traps on conductance is calculated in the range of slave-boson mean field theory, especially when there are electrodes on both sides of the conductor. This corresponds to an investigation of transport properties in future ballistic transistors. An intrinsic dip as a result of the interference effect (Fano-Kondo effect) is expected to be observed as one of interesting interplays between physics and engineering devices.Comment: 3 pages, 5 figures. 2006 International Conference on Solid State Devices and Materials (SSDM2006), Sept. 12-15, 2006, Yokohama, Japa

FILM COATING ONTO COHESIVE FINE PARTICLES BY A NOVEL ROTATING FLUIDIZED BED COATER

In this study, film coating onto cohesive fine particles was conducted by using a novel rotating fluidized bed coater (RFBC). In order to avoid the formation of agglomeration, baffle plates were equipped inside the RFBC. Coating experiments were conducted under various operating conditions and the coated particles were evaluated based on their physical properties. As a result, coated particles having extremely small degree of agglomeration and favorable prolonged release property of a tracer material could be obtained